Silicon Chemical Vapor Deposition on macro and submicron powders in a fluidized bed
نویسندگان
چکیده
منابع مشابه
SnO2 coated Ni particles prepared by fluidized bed chemical vapor deposition
A Fluidized Bed Metal–Organic Chemical Vapor Deposition (FB-MOCVD) process was developed for the growth of tin oxide thin films on large hollow Ni particles. Tetraethyl tin was used as tin source and dry air both as fluidization gas and oxidant reagent. The SnO2 films were grown in a FBCVD reactor under reduced pressure (13.3 kPa) in the temperature range of 633–663 K. A series of specific expe...
متن کاملSimulations of Silicon Carbide Chemical Vapor Deposition
ii by using insulation material correctly, a more uniform temperature distribution can be obtained. A model for the growth of SiC is used to predict growth rates at various process parameters. A number of possible factors influencing the growth rate are investigated using this model. The importance of including thermal diffusion and the effect of etching by hydrogen is shown, and the effect of ...
متن کاملSimulation of Epitaxial Silicon Chemical Vapor Deposition in Barrel Reactors
the epitaxial silicon chemical vapor deposition by SiClq/H2 mixtures in a LPE 861 barrel reactor has been simulated by means of a detailed 2D model solved by the commercial finite element code FIDAP. Different reactor configurations (i .e., bell diameter, gas diffusers, susceptor tilting angle) and deposition conditions ( i .e . , flow rates and reactor pressure) have been examined. The simulat...
متن کاملGrowth of 3C-Silicon Carbide Nanowires using Chemical Vapor Deposition
The focus of this project was the characterization and growth of 3C-silicon carbide (b-SiC) nanowires using the vapor-liquid-solid method. Chemical vapor deposition (CVD) occurred at temperatures ranging from 1050oC to 1100oC using silane and propane as precursor gases. Experimentation with various surface preparations, including metal catalysts such as nickel (Ni) and aluminum (Al) deposited b...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Powder Technology
سال: 2009
ISSN: 0032-5910
DOI: 10.1016/j.powtec.2008.04.083